Revision 2

Accepted · core change · record

Changes against revision 1:

Title: Damage mechanism of dielectrics under picosecond wakefields
Plain: Dielectric tubes driven by very short electron bunches survive fields far above what copper tolerates, then fail at a threshold whose cause is unclear.
Precise · changed · core: Revision 1: Fused-silica and diamond structures driven by sub-picosecond electron bunches (sigma_z ~ 2e-3 to 1e-2 cm) sustained surface fields of order $eE \sim 100\ \mathrm{MeV}/\mathrm{cm}$ before damage (SLAC experiments from 2008 onward). Determine the damage mechanism and its scaling with field duration from 0.1 to 10 ps and with band gap, separating field-induced ionization, heating by beam halo, and surface charging.; Revision 2: Fused-silica and diamond structures driven by sub-picosecond electron bunches ($\sigma_z$ $\sim 2 \times 10^{-3}$ to $10^{-2}$ cm) sustained surface fields of order $eE \sim 100\ \mathrm{MeV}/\mathrm{cm}$ before damage (SLAC experiments from 2008 onward). Determine the damage mechanism and its scaling with field duration from 0.1 to 10 ps and with band gap, separating field-induced ionization, heating by beam halo, and surface charging.
Settled by: Threshold measurements versus pulse duration for at least two materials of different band gap, compared with ionization and heating models.
Kind: well-posed
Answer type: mechanism
References: (empty)
Literature status: open
Status note: (empty)
Posed since: (empty)

Decisions