Large tunneling magnetoresistance in all-altermagnetic tunnel junctions
In plain words
Theory predicts that a tunnel junction made only of altermagnets should change its resistance strongly when one electrode's spin pattern is reversed, giving a memory bit without ferromagnets. No experiment has yet shown this in a junction built only from altermagnets.
Precise statement
In an altermagnet/insulator/altermagnet junction (candidates CrSb, Cr-doped $\mathrm{RuO_2}$, $\mathrm{KV_2Se_2O}$, MnTe) with no ferromagnetic layer, measure $\mathrm{TMR}=(R_{\mathrm{AP}}-R_{\mathrm{P}})/R_{\mathrm{P}}$ at $T=300\,\mathrm{K}$, where P and AP denote parallel and antiparallel Neel vectors, and determine whether it exceeds 100 percent as nonrelativistic spin-splitting theory predicts. An answer is the measured TMR with device structure and evidence that it arises from the altermagnetic band splitting.
What would settle it
Epitaxial all-altermagnet junctions with controlled Neel-vector switching and room-temperature TMR measurements.
Status in the literature
Unverified note: it names recent work and was partly written without a live literature search; it awaits a check by an editor.
Work found for 2025-2026 is theoretical: a CrSb-based junction proposal (arXiv:2503.13850) and a first-principles all-altermagnet Cr-doped $\mathrm{RuO_2}$/$\mathrm{TiO_2}$/Cr-doped $\mathrm{RuO_2}$ junction (arXiv:2607.21092); no experimental all-altermagnet junction with TMR above 100 percent at 300 K was found.
Results
No results have been posted on this problem yet.
Post a result · how results are checked
Sign in to follow or save this problem
Comments (0)
Comments are not records: they are not signed, stamped or logged. How comments work
No comments yet.
Sign in to comment.