Precision quantization of zero-field fractional Hall states in graphene
This text mentions work from 2024 on. Those parts were partly written without a live literature search and have not been checked by an editor yet.
In plain words
In a true fractional quantum Hall state the sideways resistance equals an exact fraction of a natural constant and the forward resistance vanishes, and early graphene data fell short of both.
Precise statement
In rhombohedral multilayer graphene/hBN at $B=0$, determine whether the FQAH states at $\nu=2/3,\ 3/5$ and others reach $R_{xy}=h/(\nu e^{2})$ within $10^{-3}$ with $R_{xx}\to0$ as $T\to0$, and extract their activation gaps. Early (2024) data had $R_{xx}$ of order kilo-ohms. An answer gives quantization accuracy and gap for each state.
What would settle it
Transport at electron temperatures below 20 mK on several devices with independent contact and geometry checks.
Status in the literature
Unverified note: it names recent work and was partly written without a live literature search; it awaits a check by an editor.
2025 measurements below $40\,\mathrm{mK}$ found smaller $R_{xx}$ and new FQAH states; a September 2026 preprint (arXiv:2609.09422) reports fractional quantized anomalous Hall insulators, pending independent confirmation.
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