Semiconductor moire Hubbard and Kondo lattices

Stacking two different semiconductor sheets, such as $\mathrm{WSe_2}$ on $\mathrm{WS_2}$ or $\mathrm{MoTe_2}$ on $\mathrm{WSe_2}$, creates a triangular grid of traps for electrons, a tunable version of the Hubbard model (electrons hopping between sites and repelling each other when they share one). Gates change the electron number and the hopping, so Mott insulators (insulators caused by repulsion), electron crystals and heavy-electron metals appear in one device.

Why it matters

They allow phase transitions of strongly interacting electrons to be tuned continuously in a single sample, which bulk crystals do not allow.

Review

D. M. Kennes, M. Claassen, L. Xian, A. Georges, A. J. Millis, J. Hone, C. R. Dean, D. N. Basov, A. N. Pasupathy, A. Rubio, Moire heterostructures as a condensed-matter quantum simulator, Nature Physics, 2021. https://doi.org/10.1038/s41567-020-01154-3 reference checked

Editors' decisions

Timestamp record

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Entry 157, in checkpoint 2,123
In the log by
Block 969,698, 2026-10-03

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4 problems