Precision quantization of zero-field fractional Hall states in graphene · revision history
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- Title
- Precision quantization of zero-field fractional Hall states in graphene
- Plain
- In a true fractional quantum Hall state the sideways resistance equals an exact fraction of a natural constant and the forward resistance vanishes, and early graphene data fell short of both.
- Precise
- In rhombohedral multilayer graphene/hBN at $B=0$, determine whether the FQAH states at $\nu=2/3,\ 3/5$ and others reach $R_{xy}=h/(\nu e^{2})$ within 1e-3 with $R_{xx}\to0$ as $T\to0$, and extract their activation gaps. Early (2024) data had $R_{xx}$ of order kilo-ohms. An answer gives quantization accuracy and gap for each state.
- Settled by
- Transport at electron temperatures below 20 mK on several devices with independent contact and geometry checks.
- Kind
- well-posed
- Answer type
- value
- References
- (empty)
- Literature status
- partially-resolved
- Status note
- 2025 measurements below $40\,\mathrm{mK}$ found smaller $R_{xx}$ and new FQAH states; a September 2026 preprint (arXiv:2609.09422) reports fractional quantized anomalous Hall insulators, pending independent confirmation.
- Posed since
- 2024